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PD-94108
IRF7807V
* * * * N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
S S S G
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Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V.
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SO-8
T o p V ie w
DEVICE CHARACTERISTICS IRF7807V RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA = 25C TA = 70C Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W TJ, TSTG IS ISM TA = 25C TA = 70C IDM PD Symbol VDS VGS ID IRF7807 V 30 20 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 C A W A Units V
3/1/01
IRF7807V
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 20 100 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf
(off)
Min 30
Typ - 17
Max - 25
Units V m V
Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0A VDS = VGS,ID = 250A VDS = 24V, VGS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS=5V, ID=7.0A VDS = 16V
Current*
A nA
Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
100 9.5 2.3 1.0 2.4 3.4 12 2.0 6.3 1.2 11 2.2 5.2 16.8 14
nC
VDS = 16V, VGS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load
Source-Drain Rating & Characteristics
Parameter Diode Forward Voltage* Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottky) VSD Qrr Qrr(s) 64 Min Typ Max 1.2 Units V nC Conditions IS = 7.0A, VGS = 0V di/dt ~ 700A/s VDS = 16V, VGS = 0V, IS = 7.0A 41 nC di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A
Notes:
*
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. Device are 100% tested to these parameters.
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IRF7807V
Power MOSFET Selection for DC/DC Converters
Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the R ds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by;
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Drain Current
1
Gate Voltage t2 VGTH t0 t1 t3
QGS1
QGS2
2
QGD
Drain Voltage
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Ploss = (Irms 2 x Rds(on ) ) Q Q + I x gd x Vin x f + I x gs2 x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2
Figure 1: Typical MOSFET switching waveform
Synchronous FET The power loss equation for Q2 is approximated by;
* Ploss = Pconduction + P + Poutput drive
Ploss = Irms x Rds(on)
This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance's Cds and Cdg when multiplied by the power supply input buss voltage.
Q + ( g x Vg x f )
(
2
)
Q + oss x Vin x f + (Qrr x Vin x f ) 2
*dissipated primarily in Q1.
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IRF7807V
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn Typical Mobile PC Application The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
3.3V Supply : Q1=Q2= IRF7807V
93 92 91 Efficiency (%) Efficiency (%) 90 89 88 87 86 85 84 83 1 2 3 Load current (A) 4 5
Vin=24V
5.0V Supply : Q1=Q2= IRF7807V
95 94 93 92 91 90 89 88 Vin=24V Vin=14V Vin=10V
Vin=14V Vin=10V
87 86 1 2 3 Load current (A) 4 5
Figure 3
Figure 4
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IRF7807V
2.0
ID = 7.0A
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R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 7.0A VDS = 16V
VGS , Gate-to-Source Voltage (V)
VGS = 4.5V
0 20 40 60 80 100 120 140 160
1.5
4
3
1.0
2
0.5
1
0.0 -60 -40 -20
0 0 2 4 6 8 10 12
TJ , Junction Temperature ( C)
QG , Total Gate Charge (nC)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
R DS(on) , Drain-to -Source On Resistance ( )
0.030
100
ISD , Reverse Drain Current (A)
0.025
TJ = 150 C
10
0.020
ID = 7.0A
0.015
TJ = 25 C
1
0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2
VGS, Gate -to -Source Voltage (V)
VSD ,Source-to-Drain Voltage (V)
Fig 7. On-Resistance Vs. Gate Voltage
Fig 8. Typical Source-Drain Diode Forward Voltage
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IRF7807V
100
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10
10
0.0001
t1 , Rectangular Pulse Duration (sec)
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7807V
SO-8 Package Details
D -B -
D IM
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IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157
M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99
A
6 5 H 0.2 5 (.0 10 ) M AM
5
8 E -A -
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A1 B C D E e e1 H K
0 .10 (.00 4) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 45
.050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8
1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8
-CB 8X 0 .25 (.01 0) A1 M CASBS
L
R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X
N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
6 .46 ( .25 5 )
1 .78 (.07 0) 8X
1.27 ( .0 50 ) 3X
SO-8 Part Marking
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IRF7807V
SO-8 Tape and Reel
T E R M IN A L N UM B E R 1
1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 )
8 .1 ( .31 8 ) 7 .9 ( .31 2 )
F E E D D IRE C T IO N
NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 30 .00 ( 12 .9 9 2 ) M A X.
1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN G DIM E N S IO N : M IL L IME T E R . 2 . O UT L IN E C O N F O R M S T O E IA -4 8 1 & E IA -54 1 .
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 3/01
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